data sheet 1 of 10 2004-09-16 typical edge performance v dd = 28 v, i dq = 2.0 a, f = 1989.1mhz 0 1 2 3 4 35 40 45 50 output power (dbm) rms evm (average %) . 0 10 20 30 40 drain efficiency (%) evm efficiency t case = 25c t case = 85c PTF191601E ptf191601f thermally-enhnaced high power rf ldmos fets 160 w, 1930 ? 1990 mhz features ? thermally-enhanced packaging ? broadband internal matching ? typical edge performance - average output power = 80 w - gain = 14 db - efficiency = 35% - evm = 2.5% ? typical cw performance - output power at p?1db = 180 w - gain = 13 db - efficiency = 47% ? integrated esd protection: human body model, class 1 (minimum) ? excellent thermal stability ? low hci drift ? capable of handling 10:1 vswr @ 28 v, 160 w (cw) output power esd: electrostatic discharge sensitive device?observe handling precautions! description the PTF191601E and ptf191601f are 160-watt, internally-matched goldmos fets intended for gsm edge and cdma applications in the 1930 to 1990 mhz band. thermally-enhanced packaging provides the coolest operation available. full gold metallization ensures excellent device lifetime and reliability. PTF191601E package 30260 rf characteristics at t case = 25c unless otherwise indicated edge measurements ( not subject to production test?verified by design/characterization in infineon test fixture ) v dd = 28 v, i dq = 2.0 a, p out = 80 w, f = 1989.8 mhz characteristic symbol min typ max units error vector magnitude evm (rms) ? 2.5 ? % modulation spectrum @ 400 khz acpr ? ?60 ? dbc modulation spectrum @ 600 khz acpr ? ?73 ? dbc gain g ps ? 14 ? db drain efficiency h d ? 35 ? % ptf191601f* package 31260 *see infineon distributor for future availability.
data sheet 2 of 10 2004-09-16 PTF191601E ptf191601f rf characteristics (cont.) two-tone measurements (tested in infineon test fixture) v dd = 28 v, i dq = 2.0 a, p out = 150 w pep, f = 1990 mhz, tone spacing = 1 mhz characteristic symbol min typ max units gain g ps 12.5 14 ? db drain efficiency @ ?30 dbc im3 h d 33 35 ? % intermodulation distortion imd ? ?30 ?28 dbc dc characteristics at t case = 25c unless otherwise indicated characteristic conditions symbol min typ max units drain-source breakdown voltage v gs = 0 v, i ds = 10 a v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.065 ? w operating gate voltage v ds = 28 v, i dq = 2.0 a v gs 2.5 3.2 4.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 603 w above 25c derate by 3.45 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c, 160 w cw) r q jc 0.29 c/w ordering information type package outline package description marking PTF191601E 30260 thermally-enhanced slotted flange, single-ended PTF191601E ptf191601f* 31260 thermally-enhanced earless flange, single-ended ptf191601f *see infineon distributor for future availability.
data sheet 3 of 10 2004-09-16 PTF191601E ptf191601f typical performance (data taken in production test fixture) all published data at t case = 25c unless otherwise indicated edge modulation spectrum performance v dd = 28 v, i dq = 2.0 a, f = 1989.1 mhz -80 -75 -70 -65 -60 -55 36 38 40 42 44 46 48 50 output power (dbm) modulation spectrum (dbc) 0 10 20 30 40 50 drain efficiency (%) efficiency 400 khz 600 khz t case = 25c t case = 85c evm & modulation spectrum performance v dd = 28 v, p out = 63 w, f = 1989.1 mhz 1 1 1 2 2 2 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 quiscent drain current (a) evm rms (average %) . -80 -75 -70 -65 -60 -55 modulation spectrum (dbc) evm 400 khz 600 khz gain & efficiency vs. output power v dd = 28 v, i dq = 2.0 a, f = 1990 mhz 11 12 13 14 15 16 17 18 30 35 40 45 50 55 output power (dbm) gain (db) 0 10 20 30 40 50 60 70 drain efficiency (%) efficiency gain broadband performance v dd = 28 v, i dq = 2.0 a -20 -15 -10 -5 0 5 10 15 20 1900 1920 1940 1960 1980 2000 2020 frequency (mhz) gain (db), return loss (db) 40 45 50 55 60 output power (dbm), efficiency (%) gain efficiency return loss output power
data sheet 4 of 10 2004-09-16 PTF191601E ptf191601f typical performance (cont.) gain vs. output power v dd = 28 v, f = 1990 mhz 14.0 14.4 14.8 15.2 15.6 16.0 30 35 40 45 50 55 output power (dbm) power gain (db) i dq = 2.0 a i dq = 2.4 a i dq = 1.6 a output power vs. supply voltage i dq = 2.0 a, f = 1990 mhz 50.0 50.5 51.0 51.5 52.0 52.5 53.0 20 25 30 35 supply voltage (v) output power (dbm) intermodulation distortion vs. output power v dd = 28 v, i dq = 2.0 a, f 1 = 1990 mhz, f 2 = 1989 mhz -80 -70 -60 -50 -40 -30 -20 40 45 50 55 output power, pep (dbm) imd (dbc) 3rd order 7th 5th 3-carrier cdma 2000 performance v dd = 28 v, i dq = 2.0 a, f = 1990 mhz 0 5 10 15 20 25 30 35 40 39 41 43 45 47 49 output power (dbm) drain efficiency (%) -80 -75 -70 -65 -60 -55 -50 -45 -40 adj. ch. power ratio (dbc) efficiency alt 2, 5.23 mhz adj 1.98 mhz alt 1, 3.21 mhz
data sheet 5 of 10 2004-09-16 PTF191601E ptf191601f typical performance (cont.) is-95 cdma performance v dd = 28 v, i dq = 450 ma, f = 880 mhz 0 5 10 15 20 25 30 35 40 35 37 39 41 43 45 47 49 output power (dbm), avg. drain efficiency (%) -80 -75 -70 -65 -60 -55 -50 -45 -40 adj. ch. power ratio (dbc) efficiency adj 750 khz alt 1 1.98mhz gate-source voltage vs. temperature voltage normalized to typical gate voltage, series show current. 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 case temperature (oc) normalized bias voltage 1.20 a 4.50 a 7.80 a 11.40 a 14.85 a 18.00 a broadband circuit impedance frequency z source w z load w mhz r jx r jx 1900 1.6 ?2.2 1.5 1.9 1920 1.4 ?1.9 1.6 2.0 1930 1.5 ?1.8 1.6 2.1 1960 1.5 ?1.7 1.6 2.2 1990 1.1 ?1.5 1.5 2.3 2000 1.0 ?1.4 1.4 2.4 2020 1.0 ?1.0 1.4 2.5 0.1 0 . 1 0 . 1 - w a v e l e n g t h s t o w a r d g e n e r a a v e l e n g t h s t o w a r d l o a d - 0 . 0 1900 mhz 1900 mhz 2020 mhz 2020 mhz z load z source z 0 = 50 w z source z load g s d
data sheet 6 of 10 2004-09-16 PTF191601E ptf191601f reference circuit 191601ef_sch 5.1k v l 6 c6 1.5pf v dd 10pf l 14 l 15 c11 l 7 r6 2k v c16 0.001f c15 0.001f bcp56 r5 1.3k v r4 1.0k v lm7805 0.001f v dd qq1 q1 r7 5.1k v 10pf 10f 4.7pf 100f 10pf 0.1f 0.9pf 0.7pf 0.7pf 10pf 100f l 1 l 2 l 3 l 4 l 5 l 8 l 9 l 10 l 11 r3 c1 c2 c3 c4 c5 dut c7 c8 c9 c10 c13 c12 10 v r2 10 v r1 c14 l 12 l 13 rf_out rf_in r8 24k v reference circit schematic for f = 1960 mhz circuit assembly information dut PTF191601E or ptf191601f ldmos transistor pcb 0.76 mm [.030?] thick, e r = 4.5 rogers tmm4 2 oz. copper microstrip electrical characteristics at 1960 mhz* dimensions: l x w (mm) dimensions: l x w (in.) l 1 0.017 l , 50.0 w 1.40 x 1.30 0.055 x 0.051 l 2 0.017 l , 50.0 w 1.40 x 1.30 0.055 x 0.051 l 3 0.152 l , 43.0 w 12.47 x 1.85 0.491 x 0.073 l 4 0.137 l , 43.0 w 1.12 x 1.85 0.044 x 0.073 l 5 0.016 l , 11.8 w 1.24 x 10.16 0.049 x 0.400 l 6 0.069 l , 7.2 w 5.13 x 17.75 0.202 x 0.699 l 7 0.059 l , 58.0 w 4.98 x 1.07 0.196 x 0.042 l 8 0.017 l , 7.2 w 1.40 x 17.75 0.055 x 0.699 l 9, l 10 0.357 l , 57.0 w 30.05 x 1.12 1.183 x 0.044 l 11 0.030 l , 4.1 w 2.41 x 29.74 0.095 x 1.171 l 12 (taper) 0.085 l , 4.5 w / 5.5 w 8.13 x 29.46 / 17.65 0.320 x 1.160 / 0.695 l 13 (taper) 0.105 l , 5.5 w / 43.0 w 7.37 x 17.65 / 1.85 0.290 x 0.695 / 0.073 l 14 0.112 l , 43.0 w 9.14 x 1.85 0.360 x 0.073 l 15 0.048 l , 50.0 w 3.96 x 1.30 0.156 x 0.051 *electrical characteristics are rounded.
data sheet 7 of 10 2004-09-16 PTF191601E ptf191601f 191601ef_assy c1 c2 r1 r2 c3 c5 c6 c7 c8 c11 c13 c12 c10 c4 r3 c9 rf_in rf_out r6 q1 qq1 c14 c15 r4 c16 r5 r7 191601in_01 191601out_01 q1 10 35v + v dd lm r8 v dd v dd reference circuit (cont.) reference circuit assembly (not to scale) 1 component description manufacturer p/n or comment c1 capacitor, 0.1 f, 50v, 1206 digi-key p4525-nd c2 capacitor, 10 f, 35v, tant te series digi-key pcs6106tr-nd, smd c3 capacitor, 4.7 pf atc 100b 4r7 c4 capacitor, 0.9 pf atc 100a 0r9 c5, c7, c11, c12 capacitor, 10 pf atc 100b 100 c6 capacitor, 1.5 pf atc 100b 1r5 c8, c13 capacitor, 1 f, 100 v atc 920c105kw c9, c10 capacitor, 0.7 pf atc 100b 0r7 c14, c15, c16 capacitor, 0.001 f, 50 v, 0603 digi-key pcc1772ct-nd q1 transistor infineon bcp56 qq1 voltage regulator national semiconductor lm7805 r1, r3 resistor, 1 0 ohms, 1/4w, 1206 digi-key p10act-nd r2, r7 resistor, 5.1 k-ohms, 1/4w, 1206 digi-key p5.1kact-nd r4 resistor, 1 .0 k-ohms, 1/10w, 0603 digi-key p1.0kgct-nd r5 resistor, 1 .3 k-ohms, 1/10w, 0603 digi-key p1.3kgct-nd r6 potentiometer, 2 k-ohms, 1/4w, 0603 digi-key 3224w-202etr-nd r8 resistor, 24k ohms, 1/4w, 1206 digi-key p24kect-nd 191601ef_dtl c1 r1 r2 c3 r3 r6 q1 qq1 c14 c15 r4 c16 r5 r7 c2 10 35v + q1 lm r8 1 gerber files for this circuit are available on request.
data sheet 8 of 10 2004-09-16 PTF191601E ptf191601f package outline specifications package 30260 diagram notes: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/products 260-cases_30260 0.038 [.0015] -a- 22.350.23 [.880.009] (2x 4.830.50 [.190.020]) 2x 12.70 [.500] 23.370.51 [.920.020] 4x r 1.52 [.060] 2x 3.25 [.128] 1.02 [.040] 27.94 [1.100] 34.04 [1.340] d s g 13.72 [.540] 45 x (2.03 [.080]) sph 1.57 [.062] 2x 1.63 [.064] r 4.110.38 [.162.015] [.520 ] +.004 ?.006 lid 13.21 +0.10 ?0.15
data sheet 9 of 10 2004-09-16 PTF191601E ptf191601f package outline specifications (cont.) package 31260 diagram notes: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/products 260-cases_31260 sph 1.57 [.062] 1.02 [.040] 23.370.51 [.920.020] 2x 12.70 [.500] 45 x 2.031 [.080] d g s -a- 4.110.38 [.162.015] 22.350.23 [.880.009] 23.11 [.910] 13.72 [.540] 2x 4.830.50 [.190.020] [.520 +.004 ] ?.006 . lid 13.21 +0.10 ?0.15 0.038 [.0015]
10 of 10 goldmos ? is a registered trademark of infineon technologies ag. edition 04-09-16 published by infineon technologies ag, st.-martin-strasse 53, 81669 mnchen, germany ? infineon technologies ag 2004. all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-goldmos) usa or +1 408 776 0600 international PTF191601E/f confidential?limited internal distribution revision history: 2004-09-16 data sheet previous version: 2004-07-20 preliminary data sheet page subjects (major changes since last revision) add ptf191601f, update data, remove preliminary status.
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